- 您现在的位置：买卖IC网 > Sheet目录116 > V30100PW-M3/4W (Vishay General Semiconductor)DIODE SCHTKY DUAL 100V 15A TO3PW
Document Number: 89178 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Feb-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
V30100PW
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Juncti
on Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
100
10
1
0.1 0.2 1.10.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
Instantaneous
Forward Voltage (V)
In
s
tantaneou
s
Forwar
d Current (A)
100
10
20 30 40 50 60 70 80 90 100
1
0.1
0.01
0.001
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e Current (mA)
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
10 000
1000
100
10
0.1 1 10 100
Reverse Voltage (V)
Junction Capacit
ance (pF)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 mV
p-p
Junction to Case
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Tran
s
ient Thermal Impedance (°C/W)
TO-3PW
0.645 (16.38)
0.625 (15.87)
0.323 (8.20)
0.313 (7.95)
0.245 (6.23)
0.225 (5.72)
0.840 (21.34)
0.820 (20.83)
0.170 (4.32)
? 0.146 (3.71)
? 0.136 (3.45)
0.090 (2.29)
0.080 (2.03)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.225 (5.72)
0.205 (5.21)
0.565 (14.35)
0.545 (13.84)
0.160 (4.06)
0.140 (3.56)
0.551 (14.00)
0.537 (13.64)
0.077 (1.96)
0.063 (1.60)
0.079 (2.01)
0.065 (1.65)
0.467 (11.86)
0.453 (11.51)
5° Ref.
Both
Side
s
R0.155 (R3.94)
R0.145 (R3.68)
3° Ref.
30° Ref.
10° Typ.
Both
Side
s
3° Ref.
3° Ref.
0.050 (1.27)
0.175 (4.45)
0.165 (4.19)
0.030 (0.75)
0.020 (0.50)
0.098 (2.50)
0.083 (2.12)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
V30150C-M3/4W
DIODE SCHOTTKY 150V 30A TO220AB
V40100PW-M3/4W
DIODE SCHTKY DUAL 100V 20A TO3PW
V50100PW-M3/4W
DIODE SCHTKY DUAL 100V 25A TO3PW
V60200PGW-M3/4W
DIODE SCHTKY DUAL 200V 30A TO3PW
V80100PW-M3/4W
DIODE SCHTKY DUAL 100V 40A TO3PW
VB20200C-E3/8W
DIODE 20A 200V DUAL SCHOTTKY
VB20200G-E3/8W
DIODE 20A 200V DUAL SCHOTTKY
VBT1045CBP-E3/8W
DIODE SCHOTTKY 5A 45V
相关代理商/技术参数
V30100PW-M3-4W
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30100S
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
V30100S_09
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier
V30100S_13
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier
V30100S-E3/45
功能描述:肖特基二极管与整流器 30 Amp 100 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
V30100SE3/4W
制造商:Vishay Intertechnologies 功能描述:Diode Schottky 100V 30A 3-Pin(3+Tab) TO-220AB Tube
V30100S-E3/4W
功能描述:肖特基二极管与整流器 30 Amp 100 Volt Single TrenchMOS
RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
V30100S-E3-4W
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier